Preliminary benchmarks and analysis of boundary conditions in a trenched microstructured silicon radiation detector

Microstructured neutron detectors have the benefit of enhanced detection efficiency as compared to planar devices, achieved by etching 6LiF-filled trenches on top surface a silicon PIN diode. This sensor geometry results in complex electric field distribution and depletion characteristics within diode under reverse bias. For first time record, effects fixed oxide charge microstructured device mobile carrier transport is investigated. Prototype were fabricated with non-conformal doping. Capacitance voltage current measurements performed for these prototypes COMSOL Multiphysics simulations. A spectral response from an 241Am alpha particle source was acquired analyzed. It found that monoenergetic particles produce three prominent peaks pulse height spectrum output device. The confirmed simulations correlate dead layers incident trajectories into microstructure. also significant differences rise result, corresponding events arriving low-field region fins high-field bulk. Geant4 utilized radiation transport, interaction modeling, benchmarking data. this simulation work provide confidence ability attain benchmark electrical data semiconductor employing microstructures.